Q67060-S7014-A2 查看數據表（PDF） - Siemens AG
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Q67060-S7014-A2 Datasheet PDF : 14 Pages
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GND disconnect with GND pull up
IN
Vbb
PROFET OUT
ST
GND
Vbb
VIN VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive
load
high
IN
Vbb
PROFET OUT
ST
GND
BTS 728 L2
Inductive load switch-off energy
dissipation
E bb
IN
Vbb
E AS
ELoad
PROFET OUT
=
ST
GND
L
{ZL
EL
ER
RL
Energy stored in load inductance:
EL
=
1/2·L·I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
∫ EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= 2IL·R· LL(Vbb + |VOUT(CL)|)
ln
(1+
IL·RL
|VOUT(CL)|
)
Vbb
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 9) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Maximum allowable load inductance for
a single switch off (one channel)4)
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
ZL [mH]
1000
100
10
Semiconductor Group
1
2 3 4 5 6 7 8 9 10 11 12
IL [A]
Page 9
1999-Mar-23
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