HY27US08561M 查看數據表（PDF） - Hynix Semiconductor
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HY27US08561M Datasheet PDF : 44 Pages
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HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Document Title
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory
Revision History
No.
History
Draft Date
0.0 Initial Draft
Jul. 10. 2003
0.1 Renewal Product Group
Dec. 08. 2003
0.2 Append 1.8V Operation Product to Data sheet
Dec. 08. 2003
Insert Spare Enable function for GND Pin(#6)
- In case of Reading or Programming, GND Pin(#6) should be Low
or High.
0.3 - Change the test condition of Stand-by current-Refer to Table 13.
Change CSP Package name & thickness
- Name : VFBGA -> FBGA
- Thickness : 1.0mm(max) -> 1.2mm(max)
Mar. 08. 2004
1) Delete Cache Program Mode
0.4
2) Modify the description of Device Operations
- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read
Disabled(Enabled) (Page23)
Jun. 01. 2004
1) change FBGA dimension
0.5
: Thickness : 1.2mm(max) -> 1.0mm(max)
2) Edit Fig.33 read operation with CE don't care
Sep. 24. 2004
1) Change TSOP1,WSOP1,FBGA package dimension
0.6
- Change TSOP1,WSOP1,FBGA mechanical data
Oct. 18. 2004
- Inches parameter has been excluded from the mechanical data table
1) Change TSOP1, WSOP1, FBGA package dimension
0.7 2) Edit TSOP1, WSOP1 package figures
3) Change FBGA package figure
Oct. 20. 2004
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 0.7 / Oct. 2004
1
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