K9F1208Q0A 查看數據表（PDF） - Samsung

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产品描述 (功能)

比赛名单

K9F1208Q0A

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Samsung 

K9F5608U0C-VCB0,VIB0,FCB0,FIB0

K9F5608Q0C-DCB0,DIB0,HCB0,HIB0

K9F5608U0C-YCB0,YIB0,PCB0,PIB0

K9F5608U0C-DCB0,DIB0,HCB0,HIB0

K9F5616Q0C-DCB0,DIB0,HCB0,HIB0

K9F5616U0C-YCB0,YIB0,PCB0,PIB0

K9F5616U0C-DCB0,DIB0,HCB0,HIB0

FLASH MEMORY

32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

PRODUCT LIST

Part Number

K9F5608Q0C-D,H

K9F5616Q0C-D,H

K9F5608U0C-Y,P

K9F5608U0C-D,H

K9F5608U0C-V,F

K9F5616U0C-Y,P

K9F5616U0C-D,H

Vcc Range

1.70 ~ 1.95V

2.7 ~ 3.6V

Organization

X8

X16

X8

X16

PKG Type

TBGA

TSOP1

TBGA

WSOP1

TSOP1

TBGA

FEATURES

• Voltage Supply

• Fast Write Cycle Time

- 1.8V device(K9F56XXQ0C) : 1.70~1.95V

- Program time : 200µs(Typ.)

- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V

- Block Erase Time : 2ms(Typ.)

• Organization

• Command/Address/Data Multiplexed I/O Port

- Memory Cell Array

• Hardware Data Protection

- X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit

- Program/Erase Lockout During Power Transitions

- X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit

• Reliable CMOS Floating-Gate Technology

- Data Register

- Endurance : 100K Program/Erase Cycles

- X8 device(K9F5608X0C) : (512 + 16)bit x 8bit

- Data Retention : 10 Years

- X16 device(K9F5616X0C) : (256 + 8)bit x16bit

• Command Register Operation

• Automatic Program and Erase

• Intelligent Copy-Back

- Page Program

• Unique ID for Copyright Protection

- X8 device(K9F5608X0C) : (512 + 16)Byte

• Power-On Auto-Read Operation

- X16 device(K9F5616X0C) : (256 + 8)Word

- Block Erase :

- X8 device(K9F5608X0C) : (16K + 512)Byte

- X16 device(K9F5616X0C) : ( 8K + 256)Word

• Page Read Operation

• Safe Lock Mechanism

• Package

- K9F56XXU0C-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F56XXX0C-DCB0/DIB0

- Page Size

63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)

- X8 device(K9F5608X0C) : (512 + 16)Byte

- X16 device(K9F5616X0C) : (256 + 8)Word

- Random Access : 10µs(Max.)

- K9F5608U0C-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F56XXU0C-PCB0/PIB0

- Serial Page Access : 50ns(Min.)

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F56XXX0C-HCB0/HIB0

63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)

- Pb-free Package

- K9F5608U0C-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F5608U0C-V,F(WSOPI ) is the same device as

GENERAL DESCRIPTION

K9F5608U0C-Y,P(TSOP1) except package type.

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V

Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be

performed in typical 200µs on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typ-

ical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The

I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all pro-

gram and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-

intensive systems can take advantage of the K9F56XXX0C′s extended reliability of 100K program/erase cycles by providing

ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F56XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable

applications requiring non-volatility.

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