High-Current, 10Ω, SPST, CMOS
Analog Switches
ELECTRICAL CHARACTERISTICS—Dual Supplies (continued)
(V+ = +15V, V- = -15V, VIH = 2.4V, VIL = 0.8V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.)
(Notes 2, 7, 8)
PARAMETER
Charge Injection
-3dB Bandwidth
Off-Isolation (Note 5)
Total Harmonic Distortion
NO or NC Off-Capacitance
COM Off-Capacitance
COM On-Capacitance
DIGITAL I/O
Input Logic High
Input Logic Low
Input Leakage Current
POWER SUPPLY
Power-Supply Range
SYMBOL
CONDITIONS
Q
VGEN = 0; RGEN = 0;
CL = 1nF; Figure 4
BW
VISO
f = 1MHz; RL = 50Ω;
Figure 5
THD
f = 20Hz to 20kHz,
VN_ = 5Vp-p; RL = 600Ω
CNO(OFF),
CNC(OFF)
CCOM(OFF)
CCOM(ON)
f = 1MHz; Figure 6
f = 1MHz; Figure 6
f = 1MHz; Figure 7
VIH
VIL
IIN
VIN = 0.8V or 2.4V
TA
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
TMIN to TMAX
TMIN to TMAX
TMIN to TMAX
TMIN to TMAX
MIN
2.4
-1
±4.5
TYP
23
210
-77
0.007
25
25
67
MAX
UNITS
pC
MHz
dB
%
pF
pF
pF
V
0.8
V
1
µA
±20
V
Positive Supply Current
VIN = 0 or 5V, VN_ = 3V;
ISWITCH = 200mA,
+25°C
I+
MAX4655/4656;
ISWITCH = 100mA,
MAX4657/4658
TMIN to TMAX
90
150
µA
300
Negative Supply Current
VIN = 0 or 5V, VN_ = 3V;
ISWITCH = 200mA,
+25°C
I-
MAX4655/4656;
ISWITCH = 100mA,
MAX4657/4658
TMIN to TMAX
10
50
µA
100
Ground Current
IGND
VIN = 0 or 5V, VN_ = 3V;
ISWITCH = 200mA,
MAX4655/4656;
ISWITCH = 100mA,
MAX4657/4658
+25°C
TMIN to TMAX
80
130
µA
260
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