MAX8662(2007) 查看數據表（PDF） - Maxim Integrated

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MAX8662
(Rev.:2007)

Power-Management ICs for Single-Cell, Li+ Battery-Operated Devices

Maxim Integrated 

Power-Management ICs for

Single-Cell, Li+ Battery-Operated Devices

ELECTRICAL CHARACTERISTICS (Input Limiter and Battery Charger) (continued)

(VDC = 5V, VBAT = 4V, VCEN = 0V, VPEN_ = 5V, RPSET = 3kΩ, RISET = 3.15kΩ, CCT = 0.068µF, TA = -40°C to +85°C, unless otherwise

noted.) (Note 1)

PARAMETER

BATTERY CHARGER

BAT-to-SYS On-Resistance

SYMBOL

CONDITIONS

RBAT_REG VDC = 0V, VBAT = 4.2V, ISYS = 1A

MIN TYP MAX UNITS

40

80 mΩ

BAT-to-SYS Reverse

Regulation Voltage

VDC = 5V, VPEN1 = VPEN2 = 0V (USB 100mA mode),

ISYS = 200mA (BAT to SYS voltage drop during SYS 50 100 150 mV

overload)

BAT Regulation Voltage

BAT Recharge Threshold

BAT Fast-Charge Current

BAT Prequalification Current

VBAT_REG

IBAT = 0mA

TA = +25°C

TA = -40°C to +85°C

BAT voltage drop to restart charging

ISYS = 0mA,

RPSET = 1.5kΩ,

VPEN1 = VPEN2 = 5V

RISET = 1.89kΩ

RISET = 3.15kΩ

RISET = 7.87kΩ

VBAT = 2.5V, RISET = 3.15kΩ (prequalification

current is 10% of fast-charge current)

4.179 4.200 4.221

V

4.158 4.200 4.242

-140 -100 -60 mV

1250

675 750 825 mA

300

75

mA

ISET Resistance Range

RISET

Guaranteed by BAT charging current

(1.5A to 300mA)

1.57

7.87 kΩ

VISET-to-IBAT Ratio

Charger Soft-Start Time

BAT Prequalification

Threshold

BAT Leakage Current

CHG and Top-Off Threshold

tSS_CHG

RISET = 3.15kΩ (ISET output voltage to actual

charge-current ratio)

Charge-current ramp time

VBAT rising, 180mV hysteresis

VBAT = 4.2V,

outputs disabled

IBAT where CHG goes

high, and top-off timer;

IBAT falling (7.5% of

fast-charge current)

VDC = 0V

VDC = VCEN = 5V

RISET = 3.15kΩ

2

V/A

1.5

ms

2.9 3.0 3.1

V

0.01

5

µA

0.01

5

56.25

mA

Timer-Suspend Threshold

Timer Accuracy

Prequalification Time

Charge Time

Top-Off Time

Charger Thermal-Limit

Temperature

Charger Thermal-Limit Gain

tPREQUAL

tFST-CHG

tTOP-OFF

IBAT falling (Note 3)

CCT = 0.068µF

From CEN high to end of prequalification charge,

VBAT = 2.5V, CCT = 0.068µF

From CEN high to end of fast charge,

CCT = 0.068µF

From CHG high to end of fast charge,

CCT = 0.068µF

(Note 4)

RPSET = 3kΩ

250 300 350 mV

-20

+20 %

30

Min

300

Min

30

Min

100

°C

50

mA/°C

_______________________________________________________________________________________ 3

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