MAX8791 查看數據表（PDF） - Maxim Integrated

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MAX8791

Single-Phase, Synchronous MOSFET Drivers

Maxim Integrated 

Single-Phase, Synchronous MOSFET Drivers

ELECTRICAL CHARACTERISTICS (continued)

(Circuit of Figure 1, VDD = VSKIP = 5V, TA = -40°C to +105°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)

PARAMETER

SYMBOL

CONDITIONS

MIN TYP MAX UNITS

High (DH = high; DL = low)

VDD -

0.4

PWM Input Levels

Midlevel

VDD/2

- 0.4

VDD/2

V

+ 0.4

PWM Input Current

IPWM

Low (DH = low; DL = high)

Sink; PWM forced to VDD

Source; PWM forced to GND

0.4

-400 -200 -80

µA

80 +200 400

Midlevel Shutdown Hold

Time

tMID

120 300 600

ns

SKIP Input Threshold

SKIP Input Current

ISKIP

Rising edge

Falling edge

Sink; SKIP forced to 0.8V to VDD, TA = +25°C

1.7 2.4

V

0.8 1.5

-4

-2

-0.5

µA

Thermal-Shutdown

Threshold

TSHDN Hysteresis = 20°C

+160

°C

Note 1: Limits are 100% production tested at TA = +25°C. Maximum and minimum limits over temperature are guaranteed through

correlation using statistical-quality-control (SQC) methods.

Typical Operating Characteristics

(Circuit of Figure 1, VDD = 5V, CDH = 3nF, CDL = 3nF, TA = +25°C, unless otherwise noted.)

PACKAGE-POWER DISSIPATION

vs. PWM FREQUENCY

300

250

B

200

A

150

100

50

0

0

A: CDH = 3.3nF; CDL = 3.3nF

B: CDH = 1.5nF; CDL = 6.8nF

200 400 600 800 1000 1200

PWM FREQUENCY (kHz)

PACKAGE-POWER DISSIPATION

vs. CAPACITIVE LOAD ON DH AND DL

500

450

C

400

350

300

250

B

200

150

A

100

A: 300kHz

50

B: 600kHz

C: 1MHz

0

1000 2500 4000 5500 7000 8500 10,000

CAPACITANCE (pF)

DL RISE AND FALL TIMES

vs. CAPACITIVE LOAD

30

25

RISE TIME

20

15

10

FALL TIME

5

CDL = CDH

0

1000 2500 4000 5500 7000 8500 10,000

CAPACITANCE (pF)

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