RD00HVS1(2006) 查看數據表（PDF） - Mitsumi
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RD00HVS1 Datasheet PDF : 6 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
4
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
3
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
1.0
Ta=+25°C
Vds=10V
0.8
0.6
0.4
0.2
0.0
012345
Vgs(V)
Vds-Ids CHARACTERISTICS
1.5
Ta=+25°C
1
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
0.5
Vgs=4V
Vgs=3V
0
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
20
18 Ta=+25°C
16
f=1MHz
14
12
10
8
6
4
2
0
0
5
10
15
20
Vds(V)
Vds VS. Coss CHARACTERISTICS
20
18 Ta=+25°C
16
f=1MHz
14
12
10
8
6
4
2
0
0
5
10
15
20
Vds(V)
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
1
0
0
5
10
15
20
Vds(V)
RD00HVS1
MITSUBISHI ELECTRIC
2/6
10 Jan 2006
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