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RD00HVS1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W

Mitsumi 

< Silicon RF Power MOS FET (Discrete) >

RD00HVS1

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W

ATTENTION:

1.High Temperature ; This product might have a heat generation while operation,Please take notice that have

a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch

off. At the near the product,do not place the combustible material that have possibilities to arise the fire.

2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice

that do not leakage the unnecessary electric wave and use this products without cause damage for human and

property per normal operation.

3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and

electric wave obstacle for equipment.

PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:

1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details

regarding operation of these products from the formal specification sheet. For copies of the formal

specification sheets, please contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed

for consumer mobile communication terminals and were not specifically designed for use in other applications.

In particular, while these products are highly reliable for their designed purpose, they are not manufactured

under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed

necessary for critical communications elements and In the application, which is base station applications and

fixed station applications that operate with long term continuous transmission and a higher on-off frequency

during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain

period and others as needed. For the reliability report which is described about predicted operating life time of

Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi

Semiconductor product distributor.

3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore

appropriate ESD precautions are required.

4. In the case of use in below than recommended frequency, there is possibility to occur that the device is

deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.

5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is

recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,

etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of

Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.

6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to

extreme short current flow between the drain and the source of the device. These results causes in fire or

injury.

7. For specific precautions regarding assembly of these products into the equipment, please refer to the

supplementary items in the specification sheet.

8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in

any way from it’s original form.

9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page

of this data sheet.

10. Please refer to the additional precautions in the formal specification sheet.

Publication Date : Oct．2011

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