SI3021-KT 查看數據表（PDF） - Silicon Laboratories

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SI3021-KT

GLOBAL MC’97 SILICON DAA

Silicon Laboratories 

Si3038

Table 3. DC Characteristics, VD = + 5 V

(VA = 4.75 to 5.25 V, VD = 4.75 to 5.25 V, TA = 0°C to 70°C)

Parameter

Symbol

Test Condition

High Level Input Voltage

Low Level Input Voltage

High Level Output Voltage

Low Level Output Voltage

Input Leakage Current

Power Supply Current, Analog

Power Supply Current, Digital

Total Supply Current, Sleep Mode

VIH

VIL

VOH

VOL

IL

IA

ID

IA + ID

IO = –2 mA

IO = 2 mA

VA pin

VD pin

Table 4. DC Characteristics, VD = + 3.3 V

(VD = 3.0 to 3.6 V, VA = Charge Pump, TA = 0 to 70°C)

Parameter

Symbol

High Level Input Voltage

Low Level Input Voltage

High Level Output Voltage

Low Level Output Voltage

Input Leakage Current

Power Supply Current, Digital

Total Supply Current, Sleep Mode

VIH

VIL

VOH

VOL

IL

ID

IA + ID

Test Condition

IO = –2 mA

IO = 2 mA

VD pin

Min

Typ

Max

Unit

3.5

—

—

V

—

—

0.8

V

2.4

—

—

V

—

—

0.4

V

–10

—

10

µA

—

0.1

2

mA

—

14

17

mA

—

—

1.5

mA

Min

Typ

Max

Unit

2.4

—

—

V

—

—

0.8

V

2.4

—

—

V

—

—

0.35

V

–10

—

10

µA

—

12

14.5

mA

—

1.5

3.0

mA

6

Rev. 2.01

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