TA2132BF 查看數據表（PDF） - Toshiba
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TA2132BF Datasheet PDF : 13 Pages
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TA2132BP/BF
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
8
V
TA2132BP
750
Power dissipation
PD (Note 1)
mW
TA2132BF
350
Operating temperature
Storage temperature
Topr
-25~75
°C
Tstg
-55~150
°C
Note 1: Deleted above Ta = 25°C in the proportion of 6 mW/°C for TA2132BP and of 2.8 mW/°C for TA2132BF.
Electrical Characteristics (Unless otherwise specified, Ta = 25°C, VCC = 3 V,
F/E : f = 98 MHz, fm = 1 kHz
FM IF : f = 10.7 MHz, Df = ±75 kHz, fm = 1 kHz
AM : f = 1 MHz, MOD = 30%, fm = 1 kHz)
Characteristics
Supply current
Input limiting voltage
F/E Quiescent sensitivity
Local OSC voltage
Input limiting voltage
Recovered output voltage
FM IF Signal to noise ratio
Total harmonic distortion
AM rejection ratio
Voltage gain
Recovered output voltage
AM
Signal to noise ratio
Total harmonic distortion
Symbol
Test
Circuit
Test Condition
ICC (FM)
ICC (AM)
1 FM mode, Vin = 0
1 AM mode, Vin = 0
Vin (lim)
QS
VOSC
Vin (lim) IF
1 -3dB limiting point
1 S/N = 40dB
2 fOSC = 108 MHz
1 -3dB limiting point
VOD
S/N
THD
AMR
1 Vin = 80dBmV EMF
1 Vin = 80dBmV EMF
1 Vin = 80dBmV EMF
1 Vin = 80dBmV EMF
GV
VOD
S/N
THD
1 Vin = 28dBmV EMF
1 Vin = 60dBmV EMF
1 Vin = 60dBmV EMF
1 Vin = 60dBmV EMF
Min Typ. Max
Unit
¾
7.3 11.0
mA
¾
3.6
7.0
¾
10
¾
dBmV EMF
¾
15
¾
dBmV EMF
¾
130
¾
mVrms
38
43
48
dBmV EMF
180 240 300
mVrms
¾
72
¾
dB
¾
0.5
¾
%
¾
60
¾
dB
20
38
75
mVrms
55
80
110
mVrms
¾
41
¾
dB
¾
1.0
¾
%
6
2002-07-23
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