TC58DVM72A1FT00 查看數據表（PDF） - Toshiba

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TC58DVM72A1FT00

128-MBIT (16M u8 BITS/8M x 16BITS) CMOS NAND E²PROM

Toshiba 

BLOCK DIAGRAM

I/O1

to

I/O8

or

I/O16

CE

CLE

ALE

WE

RE

WP

RY/BY

I/O Control circuit

Logic control

RY/BY

TC58DVM72A1FT00/ TC58DVM72F1FT00

TC58DAM72A1FT00/ TC58DAM72F1FT00

Status register

VCCQ VCC VSS

Address register

Command register

Column buffer

Column decoder

Data register

Sense amp

Control

Memory cell array

HV generator

ABSOLUTE MAXIMUM RATINGS

SYMBOL

RATING

VALUE

TC58DVxxxxx

TC58DAxxxx

unit

VCC

Power Supply Voltage

0.6~4.6

0.6~4.6

V

VCCQ I/O port Power Supply Voltage

0.6~4.6

0.6~2.6

V

VIN

Input Voltage for Control pins

0.6~4.6

0.6~2.6

V

VI/O

Input/Output Voltage for I/O pins 0.6 V~VCCQ  0.3 V (≦ 4.6 V)

0.6 V~VCCQ  0.3 V (≦ 2.6 V)

PD

Power Dissipation

0.3

0.3

W

Tsolder Soldering Temperature(10s)

260

260

°C

Tstg

Storage Temperature

55~150

55~150

°C

Topr

Operating Temperature

0~70

0~70

°C

CAPACITANCE *(Ta =25°C, f= 1 MHz)

SYMB0L

PARAMETER

CONDITION

MIN

CIN

Input

VIN 0 V



COUT

Output

VOUT 0 V



* This parameter is periodically sampled and is not tested for every device.

MAX

10

10

UNIT

pF

pF

2003-01-24 3/34

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