GP800DCM18 查看數據表（PDF） - Dynex Semiconductor
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GP800DCM18 Datasheet PDF : 10 Pages
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GP800DCM18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
V
CES
V
GES
IC
IC(PK)
P
max
V
isol
Collector-emitter voltage
VGE = 0V
Gate-emitter voltage
-
Continuous collector current
Tcase = 65˚C
Peak collector current
1ms, Tcase = 100˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1800 V
±20
V
800 A
1600 A
6940 W
4000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
R
th(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
R
th(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
T
Junction temperature
j
Transistor
Diode
Tstg
Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
18 ˚C/kW
-
40 ˚C/kW
-
8 ˚C/kW
-
150 ˚C
-
125 ˚C
–40 125 ˚C
-
5
Nm
-
2
Nm
-
10 Nm
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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