IKW75N60T 查看數據表（PDF） - Infineon Technologies

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IKW75N60T

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKW75N60T

TRENCHSTOP™ Series

q

120A

VGE=20V

15V

90A

13V

11V

9V

60A

7V

30A

0A

0V

1V

2V

3V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(Tj = 25°C)

120A

VGE=20V

15V

90A

13V

11V

9V

60A

7V

30A

0A

0V

1V

2V

3V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic

(Tj = 175°C)

80A

60A

40A

20A

TJ=175°C

25°C

0A

0V

2V

4V

6V

8V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

(VCE=20V)

2.5V

2.0V

1.5V

1.0V

IC=150A

IC=75A

IC=37.5A

0.5V

0.0V

0°C

50°C

100°C

150°C

Figure 8.

TJ, JUNCTION TEMPERATURE

Typical collector-emitter

saturation voltage as a function of

junction temperature

(VGE = 15V)

IFAG IPC TD VLS

5

Rev. 2.8 2013-12-05

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