L5959 查看數據表（PDF） - STMicroelectronics
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L5959 Datasheet PDF : 19 Pages
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L5959
Electrical specification
Table 5.
Symbol
Electrical characteristics (continued)
(VS = 14.4V; Tamb = 25°C; unless otherwise specified)
Parameter
Test Condition
ISTG HSD1 short to ground current
ISTB
HSD1 short to VBAT current
ΔIQ(VBAT) HSD1 bias current change
TSEN
tdon
tdoff
tr
HSD1 thermal shutdown
Turn-on delay;
Turn-off delay,
Rise time
HIGH SIDE DRIVER2
VHSD1=0V
VHSD1=VBAT
IHSD1 = 0 to 100 mA;
Measure change in VBAT
current
IHSD1 = 500 µA; Increase Ta
until HSD1 disabled
IHSD1= 10mA
IHSD1= 100 mA
10% to 90%,
IHSD1 = 10mA
VdropSW Drop voltage HDS2
ISTG HSD2 short to ground current
ISTB
HSD2 short to VBAT current
ΔIQ(VBAT) HSD2 bias current change
TSEN
tdon
tdoff
tr
HSD2 thermal shutdown
Turn-on delay;
Turn-off delay,
Rise time
RST (open collector output)
Idc = 300mA
Idc =450mA, t=5S
VHSD2=0V
VHSD2=VBAT
IHSD2 = 0 to 300 mA;
Measure change in VBAT
current
IHSD2 = 500 µA; Increase Ta
until HSD2 disabled
IHSD2= 10mA
IHSD2= 300 mA
10% to 90%,
IHSD2 = 10mA
VTH VSTBY reset threshold
Force VSTBY low until RST*
asserted
VHYS
Hysteresis of reset on rising
VSTBY
trRST Rise time
10% to 90%,
RRST= 47 kΩ,
CRST = 50 pF
tfRST Fall time
90% to 10%,RRST= 47 kΩ,
CRST = 50 pF
VIH_RSTDLY RSTDLY input voltage threshold Verify RST is de asserted
ISRC RSTDLY current
RSTDLY = 0 VDC
Min. Typ. Max. Unit
240 300 400 mA
2
10
mA
0.15 10
mA
150
190 °C
10
50
110
µs
70 110 µs
35
75
µs
0.2 0.6
V
0.3 1.2
V
0.55 0.75
1
A
3.5
10
mA
0.15 10
mA
150
190 °C
10
45
110
µs
70 110 µs
30
75
µs
0.93 * 0.95 * 0.97 *
V
VSTBY VSTBY VSTBY
10
50
200 mV
20
30
µs
300 1000 ns
2.5 2.75 3.5
V
6
8.5
12
µA
11/19
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