IKW40N65F5(2012) 查看數據表（PDF） - Infineon Technologies
零件编号
产品描述 (功能)
比赛名单
IKW40N65F5
(Rev.:2012)
(Rev.:2012)
Infineon Technologies
IKW40N65F5 Datasheet PDF : 18 Pages
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IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
1.6
Eoff
Eon
1.4
Ets
0.8
Eoff
Eon
0.7
Ets
1.2
0.6
1.0
0.5
0.8
0.4
0.6
0.3
0.4
0.2
0.2
0.1
0.0
5
15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
0.0
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
1.0
Eoff
0.9
Eon
Ets
0.8
0.7
0.6
16
130V
520V
14
12
10
0.5
8
0.4
6
0.3
4
0.2
2
0.1
0.0
0
200 250 300 350 400 450 500
0
20
40
60
80
100
VCE,COLLECTOR-EMITTERVOLTAGE[V]
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
Figure 16. Typicalgatecharge
(IC=40A)
11
Rev.1.1,2012-11-09
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