IKA08N65H5(2012) 查看數據表（PDF） - Infineon Technologies

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比赛名单

IKA08N65H5
(Rev.:2012)

High speed 5 IGBT in TRENCHSTOP™ 5 technology copacked with RAPID 1 fast and soft anti parallel diode

Infineon Technologies 

IKA08N65H5

Highspeedswitchingseriesfifthgeneration

DiodeCharacteristic,atTvj=150°C

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Tvj=150°C,

VR=400V,

IF=4.0A,

diF/dt=800A/µs

Tvj=150°C,

VR=400V,

IF=2.0A,

diF/dt=800A/µs

-

55

- ns

- 0.28 - µC

- 7.7 - A

- -145 - A/µs

-

42

- ns

- 0.20 - µC

- 8.2 - A

- -220 - A/µs

7

Rev.1.1,2012-11-09

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