2SD1418DCTR-E 查看數據表（PDF） - Renesas Electronics

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2SD1418DCTR-E

Silicon NPN Epitaxial

Renesas Electronics 

2SD1418

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

120

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

80

—

—

V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

V IE = 10 µA, IC = 0

Collector cutoff current

ICBO

—

—

10

µA VCB = 100 V, IE = 0

DC current transfer ratio

hFE1*1

60

—

320

VEB = 5 V, IC = 150 mA*2

hFE2

30

—

—

VCE = 5 V, IC = 500 mA*2

Collector to emitter saturation voltage

VCE(sat)

—

—

1

V IC = 500 mA, IB = 50 mA*2

Base to emitter voltage

VBE

—

—

1.5

V VCE = 5 V, IC = 150 mA*2

Gain bandwidth product

fT

—

140

—

MHz VCE = 5 V, IC = 150 mA*2

Collector output capacitance

Cob

—

12

—

pF VCB = 10 V, IE = 0, f = 1 MHz

Notes: 1. The 2SD1418 is grouped by hFE1 as follows.

2. Pulse test

Mark

DA

DB

DC

hFE1

60 to 120 100 to 200 160 to 320

Rev.2.00 Aug 10, 2005 page 2 of 5

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