K1670 查看數據表（PDF） - Hitachi -> Renesas Electronics

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K1670

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1670

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 250

Gate to source breakdown

voltage

V(BR)GSS ±30

Gate to source leak current

I GSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off) 2.0

Static drain to source on state RDS(on) —

resistance

Forward transfer admittance |yfs|

12

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

250 µA

—

3.0

V

0.075 0.095 Ω

20

—

S

3100 —

pF

1330 —

pF

190 —

pF

45

—

ns

170 —

ns

270 —

ns

150 —

ns

1.0

—

V

90

—

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 200 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 15 A, VGS = 10 V *1

ID = 15 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 15 A, VGS = 10 V,

RL = 2 Ω

IF = 30 A, VGS = 0

IF = 30 A, VGS = 0,

diF/dt = 100 A/µs

See characteristic curves of 2SK1669.

3

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