RFL1N18 查看數據表（PDF） - Intersil
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RFL1N18 Datasheet PDF : 5 Pages
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RFL1N18, RFL1N20
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFL1N18
180
180
1
5
±20
8.33
0.0667
-55 to 150
300
260
RFL1N20
200
200
1
5
±20
8.33
0.0667
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFL1N18
BVDSS ID = 250µA, VGS = 0V
180
-
-
V
RFL1N20
200
-
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA, (Figure 8)
VDS = 0.8 x Rated
BVDSS
TC = 25oC
TC = 125oC
VGS = ±20V, VDS = 0V
ID = 1A, VGS = 10V
ID = 2A, VGS = 10V
ID = 1A, VGS = 10V, (Figures 6, 7)
ID = 1A, VDS = 10V, (Figure 10)
ID ≈ 1A, VDD = 100V RGS = 50Ω,
VGS = 10V, (Figures 11, 12, 13)
VGS = 0V, VDS = 25V, f = 1MHz,
(Figure 9)
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
±100
nA
-
-
3.65
V
-
-
8.3
V
-
-
3.65
Ω
400
-
-
S
-
15
25
ns
-
20
30
ns
-
25
40
ns
-
30
50
ns
-
-
200
pF
-
-
60
pF
-
-
25
pF
-
-
15
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Diode Reverse Recovery Time
trr
ISD = 2A, dISD/dt = 50A/µs
NOTE:
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
MIN TYP MAX UNITS
-
-
1.4
V
-
200
-
ns
5-2
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