12N50(2011) 查看數據表（PDF） - Unisonic Technologies
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12N50 Datasheet PDF : 6 Pages
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12N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous (TC=25°C)
Pulsed (Note 3)
Avalanche Current (Note 3)
Avalanche Energy
Single Pulsed (Note 4)
Repetitive (Note 5)
Peak Diode Recovery dv/dt (Note 5)
SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
RATINGS
500
±30
12 (Note 2)
48 (Note 2)
12
684
19.5
4.5
UNIT
V
V
A
A
A
mJ
mJ
V/ns
Power Dissipation TO-220/ TO-263
(TC=25°C)
TO-220F1
TO-220/ TO-263
PD
Derate above 25°C
TO-220F1
192
W
42
1.53
0.33
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =9.5mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/ TO-263
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
0.65
3.0
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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