BSM15GD120DN2E3224 查看數據表（PDF） - eupec GmbH
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BSM15GD120DN2E3224 Datasheet PDF : 9 Pages
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BSM 15 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 0.6 mA
4.5
5.5
6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 15 A, Tj = 25 °C
-
2.5
3
VGE = 15 V, IC = 15 A, Tj = 125 °C
-
3.1
3.7
Zero gate voltage collector current
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
0.3
0.5
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
1.2
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
-
-
150
AC Characteristics
Transconductance
VCE = 20 V, IC = 15 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
gfs
5.5
Ciss
-
Coss
-
Crss
-
-
-
1000 -
150
-
70
-
Unit
V
mA
nA
S
pF
2
Oct-20-1997
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