1N4148-P(2008) 查看數據表（PDF） - Vishay Semiconductors
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1N4148-P Datasheet PDF : 5 Pages
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1N4148-P
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 10 mA
VF
1000
mV
VR = 20 V
IR
25
nA
Reverse current
VR = 20 V, Tj = 150 °C
IR
50
µA
VR = 75 V
IR
5
µA
Breakdown voltage
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
100
V
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
4
pF
Rectification efficiency
VHF = 2 V, f = 100 MHz
ηr
45
%
IF = IR = 10 mA, iR = 1 mA
trr
8
ns
Reverse recovery time
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
4
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1.2
1.0
IF = 100 mA
0.8
10 mA
0.6
1 mA
0.4
0.1 mA
0.2
0
- 30
0
30
60 90 120
94 9169
Tj - Junction Temperature (°C)
Figure 1. Forward Voltage vs. Junction Temperature
1000
Tj = 25 °C
100
Scattering Limit
10
1
1
10
100
94 9098
VR- Reverse Voltage (V)
Figure 3. Reverse Current vs. Reverse Voltage
1000
100
1N4148-P
10
Scattering Limit
1
0.1
0
94 9170-1
Tj = 25 °C
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
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2
For technical support, please contact: Diodes-SSP@vishay.com
Document Number 81873
Rev. 1.0, 31-Mar-08
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