MGA-64135 查看數據表（PDF） - HP => Agilent Technologies
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MGA-64135 Datasheet PDF : 4 Pages
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MGA-64135 Absolute Maximum Ratings
Symbol
Vd
Pdiss
Pin
Tch
TSTG
Parameter
Device Voltage
Total Power Dissipation[2]
CW RF Input Power
Channel Temperature
Storage Temperature[3]
Units
V
mW
dBm
°C
°C
Absolute
Maximum[1]
12
650
+13
175
-65 to 175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 150°C/W[4]; TCH = 150°C
1 µm Spot Size[5]
Notes:
1. Operation of this device above any one of these parameters may cause
permanent damage.
2. Derate linearly at 8.3 mW/°C for
TCASE > 103°C.
3. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit. After a device has been soldered into a
circuit, it may be safely stored up to 175°C.
4. The thermal resistance value is based on measurements taken with the
device soldered to a 25 mil Teflon PCB.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section for more information.
MGA-64135 Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions: Vd = 10 V, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 2 to 6 GHz
∆GP
Gain Flatness
f = 2 to 6 GHz
—
VSWR
Gain Variation vs. Temperature
TCASE = –25°C to +85°C
Input VSWR
Output VSWR
f = 2 to 6 GHz
f = 2 to 6 GHz
f = 2 to 6 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 2 to 6 GHz
NF
50 Ω Noise Figure
—
Reverse Isolation (|S21| 2)
f = 2 to 6 GHz
f = 2 to 6 GHz
Id
Device Current
Units Min.
dB 10.0
dB
dB
Typ. Max.
12.0
± 1.20
± 0.5
1.5:1 2.0:1
1.4:1 2.0:1
dBm 10.0 12.0
dB
7.5
dB
35
mA 35
50 65
6-193
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