1SS400G 查看數據表（PDF） - Willas Electronic Corp.

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比赛名单

1SS400G

Switching diode

Willas Electronic Corp. 

WILLAS

66FMT*1H2R0U-M+

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

ELECTRICAL CHARSAOCDT-1E2R3I+STIPCACCUKRAVGEES

FM1200-M+

Pb Free Product

(Ta = 25°C)

Package outline

Featu1res

1m

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optim10i0zme board space.

SOD-123H

0.1m

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High s10umrge capability.

0.146(3.7)

10µ

0.130(3.3)

0.012(0.3) Typ.

• Guardring for overvoltage protection.

1µ

• Ultra high-speed switching.

•

1m

Silicon epitaxial

planar

chip,

metal

silicon

junction.

• Lead-free parts meet environmental standards of

100n

0.071(1.8)

0.056(1.4)

MIL-STD-19500 /228

• RoHS10p0rµoduct for packing code suffix "G"

10n

Halogen free product for packing code suffix "H"

Mechanical data

10µ

• Epoxy : U0L94-0V.20 rat0e.4d flam0.6e reta0.8rdant1.0

1.2

1.4

• Case : Molded plFaOstRicW, ASRODD-V1O2L3THAGE : VF (V)

• Terminals :PlFaitged.1teFrmorinwaalsr,dsoclhdearraabcletepreisr MticILs-STD-750,

1n

0.040(1.0)

0

20

40

60

80 0.0241(000.6)

120

REVERSE VOLTAGE : VR (V)

0.031(0.8) Typ.

0.031(0.8) Typ.

Fig.2 Reverse characteristics

10 Method 2026

• Polarity : Indicated by cathode band

• Mounting5 Position : Any

3

Dimensions in inches and (millimeters)

• Weight : Approximated 0.011 gram

2

2

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ a1mbient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

0.5

1

RATINGS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

Marking Code

Maximum Recurren0.t2 Peak Reverse Voltage

12

VRRM

20

Maximum RMS Voltage

VRMS

14

Maximum DC Bloc0k.1ing Voltage

0

2

4

6

8

10VDC 12

20

14

Maximum Average Forward RRecEtiVfieEdRCSuErrVeOntLTAGE : VR (VIO)

Peak Forward SurgeFCigur.r3entC8.a3pmascsiintgalenhcaelf sbinee-twwaveeenIFtSeMrminals

superimposed on rat1e0d0 load (JEDEC method)

Typical Thermal Resistance (Note 2)

RΘJA

Typical Junction Cap50acitance (Note 1)

CJ

Operating Temperature Range

TJ

Storage Temperature Range

20

TSTG

13

14

15

16

30

40

50

60

18

10

115 120

80

100

150

200

21

28

35

42

0

56

70

105

140

30

40

500

60 10 80

10200

150 30 200

FORW1.A0RD CURRENT : I F (mA)

Fig.4 Reverse recovery time characteristics

30

-55 to +125

40

120

-55 to +150

0-.0615µFto +17D5 .U.T.

Volts

Volts

Volts

Amps

Amps

℃/W

PF

℃

℃

CHARACTERISTICS

Maximum Forward V1o0ltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking V5oltage

@T A=125℃

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH5kFΩM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

VF

IR

0.5P0ULSEGENERAT0O.7R0

OUTPUT 50Ω

0.5

50Ω0.85

SAMP0LI.N9 G

0.92

OSCILLOSCOPE

Volts

mAmp

10

NOTES:

1- Measured at 1 MHZ 2and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

1

0.1

1

10

100

1000

10,000

PULSE WIDTH : TW (ms)

Fig.5 Surge current characteristics

Fig.6 Reverse recovery time (trr)

measurement circuit

2012-10

2012-06

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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