IRF614 查看數據表（PDF） - Intersil
零件编号
产品描述 (功能)
比赛名单
IRF614 Datasheet PDF : 7 Pages
| |||
IRF614
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF614
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
250
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . VDGR
250
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
2.0
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
1.3
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
8.0
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
20
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.16
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . EAS
61
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . .TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
BVDSS VGS = 0V, ID = 250µA, (Figure 10)
VGS(TH) VGS = VDS, ID = 250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V
TJ = 125oC
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V,
(Figure 7)
250 -
-
V
2.0 - 4.0
V
-
-
25
µA
-
- 250 µA
2.0 -
-
A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
IGSS
rDS(ON)
gfs
VGS = ±20V
VGS = 10V, ID = 2.5A, (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A,
(Figure 12)
-
- ±100 nA
- 1.6 2.0
A
0.8 1.2 -
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
td(ON) VDD = 0.5 x Raterd BVDSS, ID ≈ 2.0A, RL = 61Ω -
8.9 13
ns
VGS = 10V, (Figures 17, 18)
tr
MOSFET Switching Times are Essentially Inde- -
12 18
ns
pendent of Operating Temperature
td(OFF)
-
18 27
ns
tf
- 8.9 15
ns
Qg(TOT) VGS = 10V, ID = 2.0A, VDS = 0.8 x Rated BVDSS -
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Qgs Temperature
-
9.6 14.4 nC
2.4 3.6 nC
Qgd
- 4.5 6.7 nC
CISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)
- 180 -
pF
COSS
-
53
-
pF
CRSS
-
14
-
pF
2
Share Link: 