2N5298 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

比赛名单

2N5298

Silicon NPN Transistors

Unspecified 

Power Transistors

2N5298

Silicon NPN Transistors

Features

With TO-220 package

Designed for use in general purpose amplifier and switching

applications

Absolute Maximum Ratings Tc=25

SYMBOL

PARAMETER

VCBO Collector to base voltage

VCEO Collector to emitter voltage

VEBO Emitter to base voltage

ICP Peak collector current

IC

Collector current

PC Collector power dissipation

Tj Junction temperature

Tstg Storage temperature

RATING

80

60

5.0

5.0

4.0

36

-65~150

-65~150

UNIT

V

V

V

A

A

W

Electrical Characteristics Tc=25

SYMBOL

ICBO

IEBO

ICEO

VCBO

V(BR)CEO

VEBO

VCEsat-1

VCEsat-2

VCEsat-3

VCEsat-4

hFE-1

hFE-2

hFE-3

hFE-4

VBE(sat)1

VBE(sat)2

VBE(sat)3

fT

tf

ts

PARAMETER

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter cut-off current

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-emitter saturation voltages

Collector-emitter saturation voltages

Collector-emitter saturation voltages

Collector-emitter saturation voltages

Forward current transfer ratio

Forward current transfer ratio

Forward current transfer ratio

Forward current transfer ratio

Base-emitter saturation voltages

Base-emitter saturation voltages

Base-emitter saturation voltages

Transition frequency at f = 1MHz

Fall time

Tum-off storage time

CONDITIONS

VCB = 80V; IE=0

VEB = 5V; IC=0

VCE=60V,IB=0

IC=30mA,IB=0

IC = 3A; IB = 375mA

IC=1A,VCE=4V

IC=3A,VCE=4V

IC=3A,VCE=4V

IC=0.5A,VCE=10V

INCHANGE

TO-220

MIN

MAX

UNIT

0.2

mA

1.0

mA

0.3

mA

60

V

1.2

V

25

10

50

1.8

V

3.0

Share Link: