2N5460_D26Z 查看數據表（PDF） - Fairchild Semiconductor

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2N5460_D26Z

P-Channel General Purpose Amplifier

Fairchild Semiconductor 

Discrete POWER & Signal

Technologies

2N5460

2N5461

2N5462

MMBF5460

MMBF5461

G

SD

TO-92

G

D

SOT-23

S

Mark: 6E / 61U

P-Channel General Purpose Amplifier

This device is designed primarily for low level audio and general

purpose applications with high impedance signal sources. Sourced

from Process 89.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

-

Symbol

Parameter

Value

VDG

VGS

IGF

TJ ,Tstg

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

- 40

40

10

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

V

mA

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Max

2N5460

625

5.0

83.3

*MMBF5460

350

2.8

200

357

Units

mW

mW /°C

°C/W

°C/W

ã 1997 Fairchild Semiconductor Corporation

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