2N6788 查看數據表（PDF） - New Jersey Semiconductor
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比赛名单
2N6788 Datasheet PDF : 1 Pages
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<Se.mL~C.onau.ctoi.
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U'S'A
IM-CHANNEL
POWER MOSFETa
TELEPHONE: (201) 376-2922
(212) 227-6005
FAX: (201)376-8960
Absolute Maximum Ratings
VDS
VDGR
ID ^ TC * 26°C
ID ffl TC • 100°c
Inu
VGS
>S
ISM
PD « TC - 26«C
ILM
PWTMttf
Drain - Source Voltage (1)
Drain - Gatt Voltage (figs - 20 KQ) CD
Condnuou* Drain Current
ConrJnuoua Drain Current
Pulaed Drain Cumm Q)
Gate- Source Voltage
ContinuDua Source Current
(Body Dlodel
Pulae Source Current (Body Diode) ®
nrtax. (WrW Onvpnon
Linear Derating Factor.
Inductive Current, damped
Tj
Operating Junction end
Tftg
Storage Temperature Range
Lead Temperature
2N6788
100*
100*
B\0*
3J*
24*
*20'
6.0*
24*
20* (Sea Rg. 14)
0.16* (See Bfl. 14)
*24
-66* to ISO*
300- (0.063 In. 11.6mm) from cue for iba)
Unite
V
V
A
A
A
V
A
A
W
W/K
A
•C
•C
Electrical Characteristics @ TC = 25°C (Unless Otherwise Specified)
Pirnimtc
BVoss D"in ' Som* Breakdown Wotttg*
vGS(thl Gft* ThmnoM Voftig*
IGSS G«u - Souret LHkagt ForvnM
I<3SS G«n • Sotra LMkagi ftavww
(OSS z*° G*t* Mlttig* Orlin Cumm
VDS(onl O^SW. Vbtag. ®
"DSIonl Sutlc DrakvSouna On-S«n RniWK* (7)
Vso
gf,
Cfgg
GO,,
Nod* Fonwd \Mtagi (2)
Forvnrd Tranconducww* (2)
Input dpichmt*
Output Cjpwtmc*
'd(on)
t,
Idiom
tf
SOA
Turn-On Otujy Tlm»
!)• Tinw
TunvOH CMiy Tim*
FMI Tim*
Stfi Op»Ung ATM
Mbi.
lOO*^
2.0-
—
—
-
—
-
—
—
0.8-
1.5*
200-
100*
20-
-
-
—
-
20
20
Typ. Man
—
—
-
4.0'
—
100*
—
100*
- 250*
— 1 1000*
- 2.10*
0.25 0.30*
— O.S4'
—
1.8*
Z9
4.5*
460 aoo*
200 400*
60 100-
—
40*
- 70*
—
40*
—
70-
-
-
-
-
Unfti
V
V
nA
nA
«A
t*
V
0
0
V
Slot
pF
pF
pF
m
nl
n»
IW
W
W
T Ml Conoroon*
VGS ov, i0 - ojs mA
VDS VGS, iD - 1.0 mA
VGS 2ov. VQS . ov
VGS -2ov, VDS - ov
vDS 'oov. VGS - ov
VDS BOV. VGS - ov, TC « 12S°C
VGS 10V- 'o - «-OA
VOS 10V. ID - 3.5A, TA . 25*C
VG^ 10V, I0 - 3.8A, TA - 12S-C
TC - 25-C, ls - «.OA. VGS - OV
VDS sv- ID - ISA
VGS °v- VDS • ^v. ' - '-° MH>
SwRfl. 10
VDO * 3SV, ID - 3.6A. ZB - 600
S^Rg. 1S
(MOSFET iwitchlna tim« *r* immHHy indtptndml
01 OPWMflfl tHnp4fMWA.I
VDS * XlV- ID > 260 mA, s« HB. 1*.
VDS * 3-3V> ID - SOA, SM Rg. 16.
Thermal Resistance
Rfhjc Juncikiivi»Cut
RI^JA Junctton-to-Ambttm
-
- 6J6* K/W
-
-
176 K/W Fnw Aif Opmfcn
Source-Drain Diode Switching Characteristics (Typical)
tn
OAR
(„,
Ravwat Racowv Tlnw
n*vtm Racowid Ctwgi
Rxvnrd Tunvon Tim*
230
r~ 1.2
nm Tj * 1WC. IF - 6.0A. dip/dt - tOOA/iu
l>C Tj - 150-C. IF . 6.0A. <Slfl<* - 100A/M*
Intmnic turn-on ttmt It nagliglbl*. Tunven v»d li wtamntiallv controlM bv Lj <• LQ.
Tj - 26«C 10 160-C.
Pulw T<«: PulH width < 300ft. Duty Cycl* «, 2%.
ItapMltlv* RMkig: Pulu width IMMd by
nun. junction umptnnn.
ojjjo.om II
STTiJOui
I »6tioi4oi
1 PLACES
(TO-39)
All Oirnennons in Millimeten and (Inches)
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