A1262 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

比赛名单

A1262

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-4V

fT

Transition frequency

IE=0.2A ; VCE=-12V

Cob

Output capacitance

IE=0 ; VCB=-10V ;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-2A ;IB1=- IB2=-0.2A

RL=10Ω;VCC=-20V

Product Specification

2SA1262

MIN TYP. MAX UNIT

-60

V

-0.6 V

-100 μA

-100 μA

40

15

MHz

90

pF

0.25

μs

0.75

μs

0.25

μs

2

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