A1249 查看數據表（PDF） - Quanzhou Jinmei Electronic

零件编号

产品描述 (功能)

比赛名单

A1249

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-10μA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10μA ; IC=0

VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA

VBEsat Base-emitter saturation voltage

IC=-500mA; IB=-50mA

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE-1

DC current gain

IC=-100mA ; VCE=-5V

hFE-2

DC current gain

IC=-10mA ; VCE=-5V

fT

Transition frequency

IC=-50mA ; VCE=-10V

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

‹ hFE-1 Classifications

R

S

T

100-200 140-280 200-400

Product Specification

2SA1249

MIN TYP. MAX UNIT

-160

V

-180

V

-6

V

-0.2 -0.5

V

-0.85 -1.2

V

-1.0 μA

-1.0 μA

100

400

90

120

MHz

22

pF

2

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