A1671 查看數據表（PDF） - Inchange Semiconductor
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A1671 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-3 A;IB=B -0.3 A
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1671
MIN TYP. MAX UNIT
-120
V
-6
V
-0.5
V
-10 μA
-10 μA
50
180
20
MHz
2
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