2SA1694 查看數據表（PDF） - Inchange Semiconductor
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2SA1694 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
Silicon PNP Power Transistor
Product Specification
2SA1694
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.3A
ICBO
Collector Cutoff Current
VCB= -120V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -3A ; VCE= -4V
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= 0.5A ; VCE= -12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -4A ,RL= 10Ω,
IB1= -IB2= -0.4A,VCC= -40V
MIN TYP. MAX UNIT
-120
V
-1.5 V
-10 μA
-10 μA
50
180
300
pF
20
MHz
0.14
μs
1.4
μs
0.21
μs
hFE Classifications
O
P
Y
50-100 70-140 90-180
2
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