2SB1198 查看數據表（PDF） - Unisonic Technologies
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2SB1198 Datasheet PDF : 3 Pages
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UTC2SB1198 PNP EPITAXIAL SILICON TRANSISTOR
Figure 7.Collector-emitter Saturation
Voltage vs.Collector Current (IV)
-10
-5
Ic/IB=50
-2
-1
-500m
-200m
-100m
-50m
Ta=100℃
Ta= 25℃
Ta= -25℃
-20m
-10m
-1
-10
-100
-1A
Collector Current : Ic(mA)
Figure9.Collector Output Capacitance
1000
500
200
vs.Collector-Base Voltage
Emitter Input Capacitance
vs.Emitter-Base Voltage
Ta=25℃
f =1MHz
IE=0A
Ic=0A
100
50
20
10
5
2
1
-0.1
-1
-10
Collector to Base Voltage:VCB (V)
Emitter to Base Voltage:VEB (V)
-100
1000
500
200
100
50
20
10
1m
Figure 8. Gain Bandwidth Product
vs.Emitter Current
Ta= 25℃
VCE= -10V
10m
100m
1
Emitter Current : IE (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO. LTD 3
QW-R206-040,A
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