2SB1694T106 查看數據表（PDF） - ROHM Semiconductor

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2SB1694T106

General purpose amplification (-30V, -1A)

ROHM Semiconductor 

2SB1694

　 　 　 　　 　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCBO

-30

V

VCEO

-30

V

VEBO

-6

V

IC

-1

A

ICP*1

-2

A

PD*2

200

mW

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Collector-base breakdown

voltage

BVCBO IC = -10μA

-30 -

-

V

Collector-emitter breakdown

voltage

BVCEO IC = -1mA

-30 -

-

V

Emitter-base breakdown voltage BVEBO IE = -10μA

-6

-

-

V

Collector cut-off current

ICBO VCB = -30V

-

- -100 nA

Emitter cut-off current

IEBO VEB = -6V

-

- -100 nA

Collector-emitter saturation voltage VCE(sat) IC = -500mA, IB = -25mA - -180 -380 mV

DC current gain

hFE VCE = -2V, IC = -100mA 270 - 680 -

Transition frequency

fT

VCE = -2V, IE = 100mA,

f = 100MHz

-

320

-

MHz

Output capacitance

Cob

VCB = -10V, IE = 0A,

f = 1MHz

*1 Pw=1ms, Single Pulse.

*2 Each terminal mounted on a reference land.

-

7

- pF

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20190621 - Rev.003

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