B509 查看數據表（PDF） - Quanzhou Jinmei Electronic

零件编号

产品描述 (功能)

比赛名单

B509

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A

VBE

Base-emitter on voltage

IC=-1A ; VCE=-2V

ICBO

Collector cut-off current

VCB=-20V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-2V

hFE-2

DC current gain

IC=-0.1A ; VCE=-2V

fT

Transition frequency

IC=-0.5A ; VCE=-5V

‹ hFE-1 Classifications

C

D

E

F

40-80 60-120 100-200 160-320

Product Specification

2SB509

MIN TYP. MAX UNIT

-60

V

-1.0

V

-1.5

V

-0.1 mA

-1.0 mA

40

320

40

8

MHz

2

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