C1213 查看數據表（PDF） - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
比赛名单
C1213 Datasheet PDF : 6 Pages
| |||
2SC1213, 2SC1213A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SC1213
2SC1213A
Unit
35
50
V
35
50
V
4
4
V
500
500
mA
400
400
mW
150
150
°C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1213
2SC1213A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 35
—
—
50
—
—V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 35
—
—
50
—
—V
IC = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
4
— —4
— —V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
DC current tarnsfer ratio hFE*1
hFE
— — 0.5 — — 0.5 µA
60 — 320 60 — 320
10 — — 10 — —
Collector to emitter
saturation voltage
VCE(sat)
—
0.2 0.6 —
0.2 0.6 V
Base to emitter voltage VBE
— 0.64 — — 0.64 — V
Notes: 1. The 2SC1213 and 2SC1213A are grouped by hFE as follows.
2. Pulse test
B
C
D
VCB = 20 V, IE = 0
VCE = 3 V, IC =10 mA
VCE = 3 V,
IC = 500 mA*2
IC = 150 mA,
IB = 15 mA*2
VCE = 3 V, IC = 10 mA
60 to 120 100 to 200 160 to 320
2
Share Link: 