2SC1970 查看數據表（PDF） - Inchange Semiconductor
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2SC1970 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1970
DESCRIPTION
·High Power Gain-
: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V
·High Reliability
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage RBE= ∞
17
V
VEBO Emitter-Base Voltage
4
V
IC
Collector Current
Collector Power Dissipation
@TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
0.6
A
5
W
1
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
125 ℃/W
25 ℃/W
isc Website：www.iscsemi.cn
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