C2830 查看數據表（PDF） - Quanzhou Jinmei Electronic

零件编号

产品描述 (功能)

比赛名单

C2830

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0

VCEsat Collector-emitter saturation voltage IC=12A; IB=2.4A

VBEsat Base-emitter saturation voltage

IC=12A; IB=2.4A

ICBO

Collector cut-off current

VCB=500V; IE=0

ICEO

Collector cut-off current

VCE=400V; IB=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE-1

DC current gain

IC=2.4A ; VCE=5V

hFE-2

DC current gain

IC=12A ; VCE=5V

Product Specification

2SC2830

MIN TYP. MAX UNIT

400

V

1.2

V

1.5

V

0.1 mA

0.1 mA

0.1 mA

15

50

10

2

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