2SC3152 查看數據表（PDF） - Quanzhou Jinmei Electronic

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比赛名单

2SC3152

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A

VBEsat Base-emitter saturation voltage

IC=1.5A;IB=0.3A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.2A ; VCE=5V

hFE -2

DC current gain

IC=1A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IC=0.2A ; VCE=10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=2A;IB1=0.4A;IB2=-0.8A

RL=20Ω,VCC=400V

‹ hFE-1 classifications

K

L

M

10-20

15-30

20-40

Product Specification

2SC3152

MIN TYP. MAX UNIT

800

V

900

V

7

V

2.0

V

1.5

V

10

μA

10

μA

10

40

8

60

pF

15

MHz

1.0

μs

3.0

μs

0.7

μs

2

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