2SC3480 查看數據表（PDF） - Inchange Semiconductor

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2SC3480

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3480

DESCRIPTION

·High Breakdown Voltage-

: VCBO= 1500V (Min)

·High Switching Speed

·High Reliability

·Built-in Damper Diode

APPLICATIONS

·Designed for high definition CRT display horizontal

deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current- Continuous

3.5

A

Collector Power Dissipation

PC

@ TC=25℃

80

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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