2SC3482 查看數據表（PDF） - Inchange Semiconductor

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2SC3482

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3482

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= 5mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1.2A

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 1A; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 6A

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 10V

tstg

Storage Time

tf

Fall Time

IC= 5A, IB1= 1A; IB2= -2A;

RL= 40Ω; VCC= 200V

MIN TYP. MAX UNIT

800

V

1500

V

7

V

5.0

V

1.5

V

10 μA

40

130 mA

8

2.0

V

3

MHz

3.0 μs

0.3 μs

isc Website：www.iscsemi.cn

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