C3505 查看數據表（PDF） - Quanzhou Jinmei Electronic
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C3505 Datasheet PDF : 3 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2A ;IB=0.4A
VCB=900V; IE=0
VEB=10V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=3A;IB1=0.6A;IB2=-1.2A
RL=100Ω,PW=20μs
Duty≤2%
Product Specification
2SC3505
MIN TYP. MAX UNIT
700
V
900
V
0.5
V
1.2
V
1.0
mA
1.0
mA
10
1.0
μs
5.0
μs
1.0
μs
2
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