2SC3992(1998) 查看數據表（PDF） - SANYO -> Panasonic

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比赛名单

2SC3992
(Rev.:1998)

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

2SC3992

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON Time

Storage Time

Fall Time

Switching Time Test Circuit

Symbol

Conditions

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCEX(sus)

ton

tstg

tf

IC=6A, IB=1.2A

IC=6A, IB=1.2A

IC=1mA, IE=0

IC=5mA, RBE=∞

IE=1mA, IC=0

IC=6A, IB1=–IB2=–1.2A, L=500µH, clamped

VCC=400V, 5IB1=–2.5IB2=IC=8A, RL=50Ω

VCC=400V, 5IB1=–2.5IB2=IC=8A, RL=50Ω

VCC=400V, 5IB1=–2.5IB2=IC=8A, RL=50Ω

Ratings

Unit

min

typ

max

2.0 V

1.5 V

1100

V

800

V

7

V

800

V

0.5 µs

3.0 µs

0.3 µs

No.2235–2/4

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