C4007 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

比赛名单

C4007

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4007

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= 50μA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50μA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2A; IB=B 0.2A

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

hFE

DC Current Gain

IC= 1A ; VCE= 4V

fT

Current-Gain—Bandwidth Product

IE= -0.2A ; VCE= 12V

COB

Output Capacitance

IE=0 ; VCB= 10V; ftest= 1MHz

‹ hFE classifications

E

F

G

100-200 160-320 250-500

MIN TYP. MAX UNIT

100

V

80

V

6

V

1.0

V

1.5

V

10 μA

10 μA

100

500

10

MHz

60

pF

isc Website：www.iscsemi.cn

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