2SC4497 查看數據表（PDF） - Toshiba
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2SC4497 Datasheet PDF : 5 Pages
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2SC4497
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC4497
High Voltage Control Applications
Unit: mm
• High voltage: VCBO = 300 V, VCEO = 300 V
• Low saturation voltage: VCE (sat) = 0.5 V (max)
• Small collector output capacitance: Cob = 3 pF (typ.)
• Complementary to 2SA1721
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
300
V
300
V
6
V
100
mA
20
mA
200
mW
150
°C
−55 to 150
°C
JEDEC
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-3F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1988-09
1
2014-03-01
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