C4531 查看數據表（PDF） - SavantIC Semiconductor

零件编号

产品描述 (功能)

比赛名单

C4531

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC4531

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=7A; IB=1.7A

VBEsat

Base-emitter saturation voltage

IC=7A; IB=1.7A

ICBO

Collector cut-off current

VCB=500V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

Cob

Collector output capacitance

IE=0 ; VCB=10V,f=1MHz

VF

Diode forward voltage

IF=7A

fT

Transition frequency

IC=0.1A ; VCE=10V

Switching times resistive load

ts

Storage time

tf

Fall time

ICP=7A;IB1 =1.4A

IB2 =-2.8A; RL=28.5A

MIN TYP. MAX UNIT

5

V

5

V

1.5

V

10

µA

66

100

200

mA

8

210

pF

1.5

1.8

V

1

3

MHz

1.8

2.5

µs

0.1

0.2

µs

2

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