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2SC4830 查看數據表(PDF) - Inchange Semiconductor

零件编号
产品描述 (功能)
比赛名单
2SC4830
Iscsemi
Inchange Semiconductor Iscsemi
2SC4830 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4830
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 1A
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
COB
Output Capacitance
Switching Times; Resistive Load
IE= 0; VCB= 10V; ftest= 1.0MHz
tstg
Storage Time
tf
Fall Time
IC= 4A; IB1= 0.8A; IB2= -1.6A;
RL= 51Ω
5.0
V
1.5
V
1.0 mA
10 μA
8
4
8
3
MHz
175
pF
2.5 μs
0.2 μs
isc Websitewww.iscsemi.cn
2
 

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