2SC5634 查看數據表（PDF） - Isahaya Electronics

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2SC5634

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

Isahaya Electronics 

〈SMALL-SIGNAL TRANSISTOR〉

2SC5634

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

1000.0

DC FORWARD CURRENT GAIN

VS. COLLECTOR CURRENT

Ta=25℃

VCE =5V

GAIN BANDWIDTH PRODUCT

VS. COLLECTOR CURRENT

10.0

Ta=25℃

VCE=3V

100.0

10.0

0.1

1.0

10.0

COLLECTOR CURRENT IC(mA)

100.0

1.0

1.0

10.0

COLLECTOR CURRENT IC(mA)

100.0

POWER GAIN VS. COLLECTOR CURRENT

20.0

18.0 Ta=25℃

VCE=3V

16.0

14.0

12.0

f= 1.0GHz

10.0

8.0

f= 2.0GHz

6.0

4.0

2.0

1.0

10.0

100.0

COLLECTOR CURRENT IC(mA)

POWER GAIN VS. COLLECTOR CURRENT

20.0

18.0

Ta=25℃

VCE=1V

16.0

14.0

12.0

10.0

f =1. 0GHz

8.0

f=2.0GHz

6.0

4.0

2.0

0.0

1.0

10.0

COLLECTOR CURRENT IC(mA)

100.0

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