2SD1407A-R 查看數據表（PDF） - Toshiba
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2SD1407A-R Datasheet PDF : 4 Pages
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2SD1407A
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1407A
Power Amplifier Applications
Industrial Applications
Unit: mm
• High breakdown voltage: VCEO = 100 V
• Low collector saturation voltage: VCE (sat) = 2.0 V (max)
• Complementary to 2SB1016A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
5
A
Base current
IB
0.5
A
Collector power dissipation
(Tc = 25°C)
PC
30
W
JEDEC
―
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-07-24
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