2SB1296 查看數據表（PDF） - SANYO -> Panasonic

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比赛名单

2SB1296

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

2SB1296/2SD1936

Symbol

Conditions

fT

VCE=(–)2V, IC=(–)50mA

Cob

VCB=(–)10V, f=1MHz

VCE(sat)1

VCE(sat)2

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC=(–)5mA, IB=(–)0.5mA

IC=(–)400mA, IB=(–)20mA

IC=(–)400mA, IB=(–)20mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

Ratings

min

typ

(300)

200

(15)

10

(–)10

(–)100

(–)0.9

(–)15

(–)15

(–)5

max

(–)25

(–)200

(–)1.2

Unit

MHz

MHz

pF

pF

mV

mV

V

V

V

V

No.2468–2/5

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